* 12 A, 30 V. RDS(ON) = 12 mΩ @ V GS = 10 V. RDS(ON) = 14.5 mΩ @ V GS = 4.5 V
Applications
* DC/DC converter
* High performance trench technology for extrem.
* DC/DC converter
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (18 nC t.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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